 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications * Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier. Features * * * * * 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 12 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 Conditions Ratings (-)60 (-)60 (-)6 (-)3 (-)8 2 20 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Ratings min typ max (-)100 (-)100 Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2000 TS IM 8-2055 No.2246-1/4 2SB1274/2SD1913 Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol hFE1 hFE2 fT Cob VCE(sat) VBE V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCE=(--)5V, IC=(-)0.5A VCE=(--)5V, IC=(-)3A VCE=(--)5V, IC=(-)0.5A VCB=(--)10V, f=1MHz IC=(--)2A, IB=(--)0.2A VCE=(--)5V, IC=(-)0.5A IC=(--)1mA, IE=0 IC=5mA, RBE= IE=(-)1mA, IC=0 (--)60 (--)60 (--)6 Ratings min 70* 20 100 (60)40 (--)0.4 (--)0.8 (--)1 (--)1 MHz pF V V V V V typ max 280* Unit * : The 2SBB1274 / 2SD1913 are classified by 0.5A hFE as follows : Rank hFE Q 70 to 140 R 100 to 200 S 140 to 280 mA--45m --2.5 A --4 0m 2SB1274 --35 mA --30mA --25mA 50mA 45mA --3.0 IC -- VCE A 3.0 IC -- VCE mA A 30 25m mA mA 40 35 20mA 2SD1913 15mA 2.5 Collector Current, IC -- A --50 --2.0 Collector Current, IC -- A --20mA --15mA 2.0 10mA 1.5 --1.5 --10mA --1.0 --5mA 1.0 5mA --0.5 0.5 0 0 --1 --2 --3 --4 IB=0 --5 --6 IT02816 0 0 1 2 3 4 IB=0 5 6 IT02817 Collector-to-Emitter Voltage, VCE -- V --3.6 --3.2 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 3.6 3.2 IC -- VBE 2SB1274 VCE= --5V Collector Current, IC -- A 2SD1913 VCE=5V Collector Current, IC -- A --2.8 --2.4 --2.0 --1.6 2.8 2.4 2.0 0 C 25 C --40 C --1.2 --0.8 --0.4 0 0 --0.2 --0.4 --0.6 1.2 0.8 0.4 0 Ta = 12 --0.8 --1.0 --1.2 --1.4 0 0.2 0.4 0.6 Ta= 1 25C --40 C 0.8 1.0 20 1.6 C 1.2 1.4 IT02819 Base-to-Emitter Voltage, VBE -- V IT02818 Base-to-Emitter Voltage, VBE -- V No.2246-2/4 2SB1274/2SD1913 1000 7 5 hFE -- IC 2SB1274 VCE= --5V Ta=120C 1000 7 5 hFE -- IC 2SD1913 VCE=5V DC Current Gain, hFE DC Current Gain, hFE 3 2 3 2 Ta=120C 25C 25C --40C --40C 100 7 5 3 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 100 7 5 3 2 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 3 IT02820 3 f T -- IC Collector Current, IC -- A IT02821 f T -- IC Gain-Bandwidth Product, f T -- MHz 100 7 5 3 2 Gain-Bandwidth Product, f T -- MHz 2 2SB1274 VCE= --5V 2 2SD1913 VCE=5V 100 7 5 3 2 10 7 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 10 7 5 5 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 Collector Current, IC -- A 2 --1.0 IT02822 2 1.0 VCE(sat) -- IC Collector Current, IC -- A IT02823 VCE(sat) -- IC 2SB1274 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2SD1913 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 --0.1 7 5 3 2 7 5 3 2 0.1 7 5 3 2 0.01 7 C 25 T 12 a= 0C C 25 2 =1 Ta 0C C 0 C 0 --4 --4 --0.01 7 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 2 IT02824 2 VBE(sat) -- IC Collector Current, IC -- A IT02825 VBE(sat) -- IC 2SB1274 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2SD1913 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 7 5 3 2 10 7 5 3 2 --1.0 7 5 3 7 --0.01 2 3 Ta=120C --40C 5 7 --0.1 25C 1.0 7 5 3 Ta= --40C 120C 7 0.01 2 3 5 7 0.1 25C 2 3 5 7 --1.0 2 3 5 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT02826 Collector Current, IC -- A IT02827 No.2246-3/4 2SB1274/2SD1913 ASO 2 --10 ASO 2SB1274 2 2SD1913 10 ICP= --8A 100s ICP=8A 100s Collector Current, IC -- A 5 3 2 --1.0 7 5 3 2 --0.1 2 3 5 10 IC= --3A 0m 50 Collector Current, IC -- A 7 7 5 3 2 1.0 7 5 3 2 0.1 s DC 1m 10 m s tio n era op 0 s 10 IC=3A 0m s 50 DC s 0 s s 1m s m 10 n op era tio 7 --10 2 3 5 Collector-to-Emitter Voltage, VCE -- V 2.5 --100 IT02828 25 7 2 3 5 7 10 2 3 5 Collector-to-Emitter Voltage, VCE -- V 7 100 IT02829 PC -- Ta PC -- Tc 2SB1274 / 2SD1913 2SB1274 / 2SD1913 Collector Dissipation, PC -- W 20 Collector Dissipation, PC -- W 2.0 1.5 No 15 he at sin 1.0 k 10 0.5 5 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT02831 Case Temperature, Tc -- C IT02830 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2000. Specifications and information herein are subject to change without notice. PS No.2246-4/4 |
Price & Availability of 2SB1274
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |